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We put forward a new type impregnated dispenser cathode, which impregnates the active salt of BaO/SrO/Sc2O3. At 1100UB, the pulse current density of the cathode is up to 86.2A/cm2, 2.7 times of the value of a traditional M-type cathode. It is proposed that, the emission of pores and pore edges caused by Sc2O3 and SrO is the main reason that the new cathode has excellent emission performance.
The growth of graphite film on copper foil by plasma enhanced chemical vapor deposition was achieved at the temperature as relatively low as 800Π. The obtained sample was characterized by SEM and Raman spectra. The results show that the transparent continuous graphite film can be obtained by PECVD.
The radiation of slit modes excited by convection electron inside a perfect metal film perforated with one dimensional array of cut-through slit is studied. The radiations of non radiating slit modes are achieved by grating coupler which provides the required momentum shift to them. Numerical simulation shows that the radiation intensity of these momentum shifted slit modes are more than that of Smith-Purcell...
Simulation of M-type cathode performance degradation is studied based on ion bombardment with interdiffusion effect considered. Sputtered volume, sputter distribution and ion spot occurrence time can be estimated, with estimated sputtered volume close to former researches. For M-type Re-coated cathode with 300nm-thick film, ion spots were estimated to appear after 2.06×105h's working.
In recent years an exciting progress has been made in developing scandate cathodes that have excellent emission properties at a lower operating temperature comparing to the traditional sintered tungsten dispenser cathodes, and consequently a significantly longer life. The initial results look very promising for the development of millimeter wave and THz sources. In order to compare performance of...
The diamond-like carbon films were prepared by filtered cathodic vacuum arc system. Surface morphology and microstructure of the films were investigated by atomic force microscope and Raman spectrum. The field emission properties of the film were tested under vacuum condition, and the turn-on field was found to be 1.3V/μm.
Os-Ru thin films with varying concentrations of W were sputter deposited on Mo-Re substrates. The films were analyzed with XRD to investigate their crystal structures and a Kelvin Probe to investigate their work functions. A film with ∼30 at.% W yielded a work function maximum of approximately 5.15 eV.
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