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We report on the physical principles of operation of a passive terahertz imager based on Pb1−xSnxTe(In). First results on construction of such an imager are presented.
In this paper, the photoconductivity of silicon is characterized in measurement in two mm-wave bands: 110GHz – 170GHz and 220GHz – 325GHz. It is shown that in the mm-wave bands the silicon has a low loss under dark condition but becomes almost opaque under light illumination.
Pulses from a 1550 and 1030 nm fiber-mode-locked laser are used to drive an ErAs:GaAs photoconductive switch, resulting in extrinsic photoconductivity and useful levels of THz (∼100 µW) with the 1550-nm laser drive, but not with the 1030-nm laser. This finding supports the recent discovery that extrinsic photoconductivity is a useful mechanism in ErAs:GaAs, but the THz generation is sensitive to the...
Chemical vapour deposition (CVD) grown graphene sheets were investigated using optical-pump terahertz-probe spectroscopy, revealing a dramatic variation in the photoinduced terahertz conductivity of graphene in different atmospheres.
Surface THz pulse emission from samples containing 40 layers of InAs quantum dots grown on a AlAs/GaAs Bragg reflector as well as the picosecond photoconductivity of devices manufactured from this material was investigated as a function of the optical wavelength of femtosecond pulses generated by an optical parametric amplifier.
We report on the development and testing of fiber-coupled, LT-GaAs photomixers operating at cryogenic temperatures which are designed for variable temperature terahertz spectroscopy of chemical, electronic and magnetic materials.
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