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In past two decades, modern industrial fabrication processes of semiconductors strongly rely on the plasma source generated by very high frequency power because of its benefits of high deposition and etching rates. In addition, large plasma chamber is needed in order to increase the production capacity. However, the underlying physics associated with high frequency power and large-scale plasma source...
A parallel 2D axisymmetric fluid model for simulating fluorocarbon (CF4) gas discharge in a dome-shaped inductively couple plasma source (ICPs) used for etching SiO2 under pressure of 20 mTorr is reported. Etching of SiO2 is an important fabrication process in semiconductor industry. Thus, etching rate and selectivity of SiO2 over Si are of extreme importance during etching. In our models, a set of...
High-order accurate finite element methods are important for problems that have strong anisotropies and complicated geometries and for stiff equation systems that are coupled through large source terms. Magnetized plasma simulations of realistic devices using the multi-fluid plasma model are examples that benefit from high-order accuracy. The multi-fluid plasma model only assumes local thermodynamic...
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