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For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing and is a major challenge to low power circuits. In addition to RTN/WDF, devices also age. The interaction between RTN/WDF and aging is of importance...
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