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The structural, morphological, and energy band alignment properties of biaxial tensile-strained germanium epilayers, grown in-situ on GaAs via a linearly graded InxGa1−xAs buffer architecture and utilizing dual chamber molecular beam epitaxy, were investigated. Precise control over the growth conditions yielded a tunable in-plane biaxial tensile strain within the Ge thin films that was modulated by...
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