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We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950–1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series of asymmetric gain stages whose layer ordering acts to enhance the rate of electron-initiated impact...
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