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We have established the 700V-class PIC technology based on 0.35µm design to provide power management ICs with higher performances and lower chip cost for the first time. And a 700V PWM-IC based on 0.35µm design, whose chip size can be reduced to 50% that of the IC based on 1.0µm design, is realized. This paper will report our developed 700V PIC technology with a PWM-IC product designed by this technology.
A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT module.
This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (RSP) vs. BVDSS characteristics (i.e., 70V NMOS has RSP of 69mΩ-mm2 with BVDSS of 89V). Modular process scheme is used for flexibility...
In this paper, a 700V lateral insulated gate bipolar transistor (LIGBT) design is proposed in a junction-isolated technology. Several key properties of LIGBT, such as hole injection leakage and breakdown-voltage, are investigated by using two-dimensional numerical simulator, MEDICI. To improve vertical junction isolation capability, an extra BLN (Buried-Layer N-type) layer is inserted in-between the...
A novel p-type DP-OPTVLD (Double-Paths & OPTimum-Variational-Lateral-Doping) LDMOS is proposed. It features the double hole-conductive paths formed by a top and a buried p-layer in the drift region using OPTVLD technique, which significantly contribute to reducing device specific on-resistance. The design principle and electrical characteristics of the proposed structure are investigated theoretically...
This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change...
The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world's first successful inverter operation...
We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.
In this paper we present a physics based analytical model for the drain current Id in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density ns model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation,...
In this paper, we studied the vertical leakage/breakdown mechanisms in AlGaN/GaN structures grown on low resistivity p-type (111) Si substrate by temperature-dependent current-voltage measurements. We suggested that the top-to-substrate vertical leakage/breakdown is dominated by the space-charge-limited current (SCLC) conduction mechanism involving both acceptor and donor traps in buffer/transition...
AlGaN/GaN Schttoky barrier diodes (SBDs) with and without in-situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with SiCN cap layer exhibited improved electrical characteristics, such as the forward turn on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, compared to the corresponding values of 0.8 V, 3.8 A,...
A critical issue for the 4H-SiC UMOSFET is a shielding of the gate oxide at the bottom of the trench gate from the high electric field during the blocking state. This study develops the UMOSFET structure with low specific on-resistance and low electric field in the gate oxide by the two-dimensional numerical device simulation. The gate oxide field is successfully decreased without the degradation...
We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 4H-SiC P-IGBT, with a chip size of 6.7 mm × 6.7 mm and an active area of 0.16 cm2 exhibited a record high blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 24 mΩ-cm2 with a gate bias of −20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 12.5 kV, and demonstrated...
Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof...
GaN based bidirectional Super Heterojunction Field Effect Transistors (BiSHFETs) using the polarization junction (PJ) concept are demonstrated for the first time. The fabricated BiSHFETs are arrayed on an insulator substrate of Sapphire and measured isolation voltage between the devices is more than 2 kV. Measured on-resistances of the fabricated BiSHFETs with MES and PN gate structures are 24 Ωmm...
AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) employing rf sputtered Ga2O3 have been proposed and fabricated. A very high breakdown voltage exceeding 3200 V and a low drain leakage current of 230 nA/mm at gate-drain distance (LGD) of 40 µm was achieved without any sacrificing DC output characteristics while those of the unpassivated HEMT were 350 V and 134...
We have proposed and fabricated AlGaN/GaN HEMTs employing a nickel oxide (NiOX) based double metal structure which showed a stable reverse blocking characteristics. The leakage current of the proposed device was decreased by four orders of magnitude. The leakage current of the conventional device at room temperature was 80 µA/mm while that of the proposed device was 16.6 nA/mm. In the high temperature...
Durability of IGBT modules mainly depends on reliability of the thick Al wire bonds used in them. We investigated the reliability of thick Al-0.5mass%Mg2Si wire bonds in comparison with conventional Al-50ppm Ni wire bonds. The shear strength of both Al-0.5mass%Mg2Si and Al-50ppmNi wire bonds were measured as a function of the number of thermal cycle tests. The strength ratio of Al-50ppmNi wire bonds...
Monolithic integration of RC snubbers in power electronic applications offers great opportunities. The presented devices provide tight tolerances and enable high integration densities. Especially, the incorporation into power modules enables reduction of electromagnetic interferences in accordance with reliable lifetime predictions.
Bonding wire current measurement technique has been highly desired to analyze failure phenomena, such as short circuit and avalanche destruction of IGBT and power diode. This paper challenged to measure bonding wire current distribution in an IGBT module with the multiple tiny film current sensors and the digital calculation technique. The authors successfully measured bonding wire current under a...
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