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Cost effective E-band transmitter and receiver chipset MMIC's, that use a three-dimensional MMIC technology optimized for flip-chip implementation, are under development. Here, the first edition of MMIC's successfully designed and fabricated are presented. The MMIC structure incorporates inverse TFMS lines so that a ground metal can be applied to cover the whole chip surface except for interconnect...
Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a frequency of 18GHz. A number of measurements have...
The design and performance of millimeter-wave monolithic integrated circuits implementing active balanced frequency multipliers for the W-band (75–110 GHz) is presented. The multipliers by eight and twelve are realized in a 100 nm gatelength metamorphic high electron mobility transistor technology. A novel circuit architecture using a cascade of active balanced frequency doubler and tripler stages...
This paper demonstrates a W-band CMOS frequency doubler which utilizes a balanced topology in order to achieve a wideband fundamental suppression. The required 180-degree phase shift is obtained by employing a spiral transmission line balun. At 100 GHz the measured conversion loss of the frequency doubler is 16 dB using an input power of +5 dBm. The fundamental suppression is better than 25 dB from...
In this paper a monolithically integrated frequency tripler based on an antiparallel pair of Schottky diodes is presented. The tripler is designed for flat output power response and wide frequency range. With 2 mW of input power the tripler covers the frequency range of 75–140 GHz (bandwidth 60 %) delivering output power between −19.4 dBm and −14.7 dBm with an average efficiency of 1.1 %. The efficiency...
This contribution presents an innovative solution to drastically increase the output power range in which the Doherty Power Amplifier shows a high and flat efficiency behaviour. The proposed topology and its main theoretical guidelines are shown and discussed. Moreover, the potentialities of the new idea and how it can solve some drawbacks in applications that manage signals with a peak to average...
We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of...
An active frequency-tripler MMIC achieving an output frequency of 315 GHz is presented. Without the use of post-amplification the frequency-tripler generates an average output power of −10.1 dBm in the output frequency range from 285 to 315 GHz. At 303 GHz the measured output power is −9.3 dBm with an input power of 10 dBm. The comparison to the simulated results shows the quality of the underlying...
Key GaN HEMT front-end circuits for next generation AESA radar/EW applications are presented. The circuits are an S-band 20 W MMIC HPA reaching 50 % measured PAE, a two-stage S-band MMIC LNA showing a measured NF of 1.3 dB, and a DC-18 GHz SPDTs showing a measured insertion loss of less than 2 dB at 18 GHz. Furthermore, a 2–18 GHz front-end circuit with a co-integrated two-stage LNA and a T/R-switch...
In this paper a new GaAs Multi-Chip MMIC C-Band Variable Gain Amplifier (VGA) is presented for point to point wireless communications systems. The VGA is composed of three dies: the first is an input stage amplifier, the second is a variable voltage controlled attenuator (VVA), and the last is an output stage amplifier. In order to achieve high linearity, low distortion, and broad bandwidth, parallel...
In the higher frequency bands of the point-to-point communication systems, it is difficult to achieve a Low Noise Variable Gain Amplifier with high dynamic range along with good linearity and low noise figure. This paper describes a solution that covers the 38GHz band in low cost SMT package in the form of a complete Down-Converter MMIC. The MMIC comprises of a Low Noise Variable Gain Amplifier (LNVGA),...
This paper discusses the design and test performance of a compact L-band 6-bit phase shifter monolithic microwave integrated circuit (MMIC). Each bit of this phase shifter design is based on an optimum topology to reach balanced and optimal insertion loss, phase shifting accuracy, gain variation, and bandwidth performance. Extensive electromagnetic simulation is performed in the circuit design to...
A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic...
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of the device reaches 47dBm (50W), with a gain...
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
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