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The DC and analog/RF performance of p-channel Schottky barrier Si and Ge nanowire transistors are simulated and some impact factors are studied. The results suggest that 100meV and 50meV are the most optimized Schottky barrier height for intrinsic gain and cutoff frequency respectively. Thinner nanowires enhance the drivability of silicon devices while impair that of germanium devices. With gate length...
In this study, we propose a new technology to fabricate pseudo tri-gate vertical (PTGV) MOSFETs without p-n junctions, named junctionless PTGVMOS (JPTGV). According to numerical analysis, the excellent electrical characteristics such as subthreshold swing (S.S.) ~ 60mV/dec, Ion/Ioff ~ 1010, and low interface trap density are all achieved. The device without p-n junctions provides an easier way for...
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming...
To further improve the performance of the bias stability which is the key character for MEMS gyroscope in navigation application, a new digital self-oscillation based drive circuit with drive phase correction is proposed. Started with the gyroscope working principle, analyzed the factors that may affect the bias output. Compared with drive amplitude control which already got a higher precision, the...
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed in this paper. To improve the circuit speed, a new input scheme is designed to provide a full scale pre-charge voltage. So the loss of pre-charge voltage, a challenge in the conventional designs, is avoided. Simulations show that the proposed gate driver has a much improved driving speed in comparison...
Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of...
This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
This paper presents a method of multi-Scan-Enable DFT design for at-speed scan testing to improve transition fault coverage. Base on the method, we build a novel TR-TC (Test Resources-Test Coverage) associated test cost mathematical model to effectively control the complexity of at-speed DFT design and establish the optimization number of Scan-Enable, which provides a reliable target control value...
The testing time interval and voltage interval in accurately measuring the efficiency of Dye-sensitized solar cells is discussed abased on experiments and quantitative analysis. By measuring a typical dye-sensitized solar cell which was characterized with the crystalline ingredient, holes, and interface, the influences of testing time interval and voltage interval to the measured I-V curve were lay...
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