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A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement...
An improved 4H-SiC MESFETs with varied p-buffer layer thickness is proposed, and the static and dynamic electrical performances are analyzed in this paper. The variation in p-buffer layer depth leads to the change in the active channel thickness and modulates the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum...
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