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Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump effect may change the MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. To model the hump effect, two narrow parasitic MOS are introduced in parallel with the main device. To accurately simulate matching...
This paper reports modeling the parasitic bipolar device in the 40 nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during transient operations could be modeled. During the turn-on transient by imposing a step voltage from 0 V to 2 V at the gate, the case with a slower rise time shows a faster turn-on in the...
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