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Variability from different sources such as layout-dependent effects due to strain has been a main obstacle against aggressive design rules and reducing corner margins in 32nm node and beyond. This paper reports and demonstrates a model development and verification platform to accurately address layout dependences due to strain. This platform has been successfully used in real design exercises at 40nm...
For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
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