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With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
In this seminar, we will first present the growth, interface magnetism and magnetotransport of several important magnetic-semiconductor hybrid spintronic structures, in particular, with half metallic magnetic oxides and Heusler alloys. The hybrid spintronic structures integrating half-metallic magnetic oxides and Heusler alloys are particularly exciting for the second generation spintronics as a 100%...
This paper presents huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs) at room temperature predicted by first-principle theory. Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism is used for interface characterization. The interfacial structure plays a crucial role on coherent tunneling...
In this paper, the structural and electronic properties of Cs adsorption on GaAs surface were studied. The samples were prepared by MBE. The conduction bands, valence bands, band structure and density of states were calculated by first principles based on density functional theory. The effect of Zn doping on electronic structure were also analyzed.
In order to improve the cathode performance, an exponential-doping structure is applied to the preparation of transmission-mode GaAs photocathodes, in which a forward-directed induced electric field is formed to facilitate photoexcited electrons movement toward surface. To verify the actual effect of the exponential-doping structure, two types of transmission-mode GaAs photocathode samples were grown...
In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable...
In this paper, growth, structural and magnetic properties of ultrathin Fe grown on GaN(OOOl) by molecular beam epitaxy. The films and their surfaces were monitored by in-situ reflection high energy electron diffraction (RHEED) and a crystal thickness monitor. The magnetic properties of the samples were determined by a superconducting quantum interference device (SQUID) magnetometer. Superparamagnetism...
Summary form only given. The quantum efficiency of negative electron affinity (NEA) GaAs photocathodes mainly depends on the performance of GaAs material. Usually, the uniform-doping structure are used in the photoemissive layer of cathodes. To increase quantum efficiency of cathodes, the varied-doping structure are used. The quantum efficiency can be increased by using the varied-doping structure...
In this paper, the epitaxial growth and the magnetic property of different thickness of ultrathin Fe3O4 film on InAs(100) are reported. As-capped InAs(100) substrate is loaded to the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) deposition chamber, following an annealing at 600° C for 30 minutes before growth. Then an in situ reflectance high energy electron diffraction (RHEED) patterns of InAs...
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