Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
Plasmon coupling of dimers of Ag nanoparticles is studied by the EELS as shown in Fig 1a [1]. The spectroscopic images in the above Fig. 1a are extracted from 2.8eV, 3.4eV and 3.6eV respectively, where one can see the preferable exciting points of the features around the Ag nanoparticles. With the aid of DDA calculation(Fig. 1b), the three features are identified as the in-phase plasmon coupling,...
With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
High temperature annealing and Cs, O activation is the formations of NEA GaN photocathode of external incentives, GaN material performance of the cathode of the internal factors are fundamental. In this paper, aiming at the difference of the uniform-doping and gradient-doping NEA GaN photocathode in structure, combined with the cathode active changes of the optical current and activated after the...
In this paper, the structural and electronic properties of Cs adsorption on GaAs surface were studied. The samples were prepared by MBE. The conduction bands, valence bands, band structure and density of states were calculated by first principles based on density functional theory. The effect of Zn doping on electronic structure were also analyzed.
Higher quantum efficiency by optimizing GaN photocathode structure is reported. AlN was used to substitute for GaN as buffer layer, which could act as a potential barrier due to its higher energy gap and reflect electrons back toward the surface direction. Graded-doping structure was used to replace uniform-doping structure, which introduced three built-in electrical fields for the different doping...
MgO thin film is widely used as a protective layer for Alternating Current-type Plasma Display Panels (AC-PDPs) owing to its high anti-sputtering and secondary electron emitting abilities. In order to improve the secondary electron emission coefficient (γ) of MgO thin film, one successful way is to add some dopants into MgO. For example, ZnO, Si and CaO have been used as dopants in the experiments...
In this paper, a first principles calculation is used to investigate the atomic and electronic properties of Mn-doped GaN (11̅00) film. The ultrasoft pseudo-potential and general gradient approximation for the exchange and correlation energy functional are used with a cutoff of 30 Ry for the expansion of the electronic wave function in plane waves. In the calculational supercell, a Ga atom is substituted...
ZnO-based dilute magnetic semiconductors (DMSs) have attracted wide interest because of their potential application in developing spintronic devices such as spin field effect transistors and spin light emitting diodes [1,2]. The DMSs are mainly manipulated via doping in bulk phase ZnO materials, which, however, has the handicaps of low composition rate and local fluctuations. Compared with bulk and...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.