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We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with...
In this paper a new methodology to characterize the breakdown of microwave electron devices under realistic device operation is described. Different experimental examples will be provided in order to demonstrate the validity of the proposed characterization technique with respect to the ones commonly adopted.
This paper describes an original silicon nLDEMOS transistor layout which allows improving the microwave power performances. Results of DC, small and large signal measurements are presented and compared between the standard and the original layouts. Regarding the power performances (power density, power added efficiency, power gain), this confrontation shows clearly the interest in using the original...
We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances...
Two types of microwave and millimeterwave power detectors realized in a commercial mHEMT MMIC-process is presented for the first time. The detectors are based on either a gate Schottky diode or active mHEMT. Possible application are microwave/millimeterwave power detectors, and multi Gb/s high speed demodulators for OOK, BPSK, QPSK etc.
This paper presents the measurements and modelling of the electromagnetic propagation in graphene in the mm-wave frequency range. Two test structures were fabricated on high resistivity silicon substrate and tested. The first is a reference structure and it was used to extract the electromagnetic parameters of the substrate up to 60 GHz. The second structure was partially supported on a graphene monolayer...
This paper presents, for the first time the theoretical introduction and experimental validation of the "Continuous Class-F Mode Power Amplifier" that provides for a new design space for the design of high efficiency and broadband power amplifiers. Starting from the standard class-F mode, this work shows that it is possible to maintain constant or even improved output power and efficiency...
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