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This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules. We will focus here specifically on the transmit path, which contains the high power amplifier and its power driver. A step by step description of the tasks in order to design this channel will be done, beginning from a short overview of the epitaxial process to the presentation of its measured and simulated...
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
The design and characterization of CMOS compatible medium voltage LDMOS transistors are presented. Devices of different sizes were fabricated in a 0.25 μm BiCMOS technology and were characterized in the most important wireless telecommunication bands up to 5.8 GHz using a load/source pull measurement setup. Alternative layouts with regards to device geometry and stabilizing networks were investigated...
This paper describes an original silicon nLDEMOS transistor layout which allows improving the microwave power performances. Results of DC, small and large signal measurements are presented and compared between the standard and the original layouts. Regarding the power performances (power density, power added efficiency, power gain), this confrontation shows clearly the interest in using the original...
Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of 305 GHz and power gain cut-off frequency (fmax) of 480 GHz at VDS of only 0.5 V. Outline...
This paper discusses the importance of chip-level EM-simulations required at millimetre wave frequencies for achieving correct results. The negative impact of interconnects on passive structures and the inability of the conventional RC-extraction to cater their effects necessitate alternative solutions. Furthermore during IC-measurements the number of probing points is limited; therefore chip-level...
This paper presents an algorithm for extrinsic element extraction of GaN-HEMTs with physically meaningful parameters calculated from S-parameters measurements at pinch-off. An improved algorithm to extract a 12-element parasitic network is presented, which allows proper modelling of the complex parasitic effects present in devices with large gate periphery. The extraction algorithm is found on a novel...
Printed electronics is considered a promising technology for low-cost electronics due to its low cost per unit area, typically offered at the expense of degraded performance. Using a combination of synthetic nanoparticles, organic semiconductors, and novel printing techniques, we demonstrate a range of printed electronic devices including transistors, passive components, and a range of chemical sensors...
High frequency characterization of epitaxial-grown graphene nano ribbon based field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of Si-faced silicon carbide. The intrinsic current gain cut-off frequency of 10 GHz was obtained. A small signal equivalent circuit model of this device was proposed which open a potentiality to the modelling...
This paper presents three different topologies of low phase noise BAW-based oscillators centered at 2.1 GHz. Two single-ended topologies: a common-base and a colpitts, as well as a colpitts differential topology have been achieved. Measurement shows that the single-ended topology is more sensitive to power supply noise, this results in an advantage for the differential topology that exhibits a phase...
We investigate 3D plasma resonances in InGaAs n+ - n - n+ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency...
This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 μm SiGe:C BiCMOS technology featuring ft and fmax ≈ 200 GHz. The saturated output power of the amplifier has been improved with the help of current combining and matching techniques. At 60 GHz the power amplifier...
This paper proposes an ultra compact LC-VCO. Due to the speed-up of CMOS digital circuits, jitter of ring oscillators is becoming a critical problem. Even though a LC-VCO has a better phase noise, a layout size of on-chip inductor is a problem as a clock generator. Thus, the proposed LC-VCO consists of a very compact stacked-spiral inductor and active components placed beneath the inductor. The VCO...
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