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AlGaN/GaN HEMTs have been widely used in RF power circuits such as high power amplifiers. This is mainly due to the capability to handle large power. Besides this main advantage, this technology demonstrates good performances in terms of noise, linearity, and robustness. This paper presents the design, and measurement results of different mixers operating at C-, Ku-, and Ka-band. All designs make...
In this work, the graded channel concept has been introduced into a fully-depleted 0.15 μm SOI CMOS technology through a commercial industrial fabrication process in order to improve the RF noise performance of deep submicron scale devices. The benefits of using a graded channel transistor are explicit. An improved minimum noise figure is achieved while relaxing the minimum feature size to, at least,...
Q-band sub-harmonic mixers (SHMs) with and without delay compensation are demonstrated in this paper using 0.15-μm metamorphic high electron mobility transistor (mHEMT) technology. A conventional stacked-LO sub-harmonic mixing cell consists of two Gilbert cells in cascode with quadrature LO inputs. The proposed compensation core in parallel with the stacked-LO core improves the port-to-port isolation...
The performance of a compact broadband driver amplifier MMIC in SMD package is presented. The amplifier is fabricated with a commercially available 6-inch 0.15-μm low-noise GaAs PHEMT technology, and packaged in a standard surface mount QFN 3×3 mm plastic package. While occupying a chip area of only 1.6 mm2, at 4V and 300 mA, this packaged 4-stage amplifier achieves a small signal gain of more than...
A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al0.3Ga0.7As/In0.5Ga0.5As low-noise depletion-mode pseudomorphic high electron mobility transistor (pHEMT) process. The DA features 10 pseudo-differential cascode pair unit cells. The chip also features...
The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of -52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated...
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