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Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of 305 GHz and power gain cut-off frequency (fmax) of 480 GHz at VDS of only 0.5 V. Outline...
This paper presents an algorithm for extrinsic element extraction of GaN-HEMTs with physically meaningful parameters calculated from S-parameters measurements at pinch-off. An improved algorithm to extract a 12-element parasitic network is presented, which allows proper modelling of the complex parasitic effects present in devices with large gate periphery. The extraction algorithm is found on a novel...
This paper proposes an original approach developed for MMIC's that allows optimizing high frequency signals isolation together with routing optimization. In fact, the proposed approach leads to a significant area reduction of the routing together with enhanced performances. Electrical performances of these interconnections are reported to area occupation compared to conventional micro strip and/or...
We present the design, fabrication and measurement of two transimpedance amplifiers with single-ended input and differential output for optical fibre communication systems. The integrated circuits have been fabricated in a 0.7-μm InP DHBT technology. The small-signal differential transimpedance gain and 3-dB bandwidth are respectively 1100 Ω and 50 GHz for the first circuit and 500 Ω and > 65 GHz...
We present a new algorithm for generating passive parametric models of microwave devices from their sampled scattering responses. The proposed formulation supports a parameterization of model poles and preserves the stability and passivity of the original device for any parameter value. These combined features lead to significant improvements with respect to the state of the art. Application examples...
In this contribution, a comparison between Class F and the so called inverse Class F (Class F-1) power amplifiers is faced. A theoretical comparison is performed presenting a different approach to study the Class F-1 mode. In particular, the strong dependence of the Class F-1 behaviour upon the shape of the driving signal is highlighted. The experimental evaluation is figured out designing two GaAs...
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