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Broadband components continue have the basic issues of fundamental high frequency performance and unit-to-unit reproducibility. While possible solutions to these two basic problems exist, it is universally acknowledged that both the basic semiconductor performance at frequencies above 10 GHz and the unit variation are severely limited by packaging, die attach, and chip and wire assembly techniques...
The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two...
We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic...
A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al0.3Ga0.7As/In0.5Ga0.5As low-noise depletion-mode pseudomorphic high electron mobility transistor (pHEMT) process. The DA features 10 pseudo-differential cascode pair unit cells. The chip also features...
Two types of microwave and millimeterwave power detectors realized in a commercial mHEMT MMIC-process is presented for the first time. The detectors are based on either a gate Schottky diode or active mHEMT. Possible application are microwave/millimeterwave power detectors, and multi Gb/s high speed demodulators for OOK, BPSK, QPSK etc.
This paper presents the measurements and modelling of the electromagnetic propagation in graphene in the mm-wave frequency range. Two test structures were fabricated on high resistivity silicon substrate and tested. The first is a reference structure and it was used to extract the electromagnetic parameters of the substrate up to 60 GHz. The second structure was partially supported on a graphene monolayer...
A modular method for the efficient and flexible design of multilayer microwave modules is investigated. In order to minimise the computational efforts for the layout and optimisation process of passive microwave circuitry, a module data base and a decomposition and cascading strategy are put forward. To verify the efficiency of this approach in the context of a demanding application, low temperature...
We present a new algorithm for generating passive parametric models of microwave devices from their sampled scattering responses. The proposed formulation supports a parameterization of model poles and preserves the stability and passivity of the original device for any parameter value. These combined features lead to significant improvements with respect to the state of the art. Application examples...
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