The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An implementation of a beamformer Application Specific Integrated Circuit (ASIC) is described in this paper, for the European SKA demonstrator project EMBRACE (Electronic Multi-Beam Radio-Astronomy ConcEpt), using the QUBÍC4G 0.25 μm Silicon Germanium process of NXP. This process is qualified as a high-performance technology to design a RF ASIC in the frequency band [400 MHz-1600 MHz]. The chip is...
The design and measurement of a differential DC-4 GHz low-noise amplifier that is impedance matched to 270 Ω is presented in this paper. At room temperature, the amplifier has a measured gain of 29 dB with a 3 dB bandwidth of 4 GHz. To measure the noise temperature of the amplifier at cryogenic temperatures, an extension of the cold attenuator method was employed. The measured noise was found to be...
This paper reports on a novel balanced HBT sub-harmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT/fmax = 180GHz/200GHz. The measured results demonstrates a conversion loss of 4.5 dB at an RF frequency of 73.5 GHz...
A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage is described. In the 54-59GHz passband, measured amplitude and phase errors are 0.7±0.5dB and ±5°, respectively. Measured |Sn| is <;-18dB from 50-65GHz, and cascoding is used to realize better than 39dB reverse isolation overall. The 0.2×0.19mm2 balun is implemented in 130nm SiGe-BiCMOS, and consumes...
This paper presents an implementation of RF passive components on a low resistivity Si substrate with a thick ajinomoto build-up film (ABF) to reduce electromagnetic field interaction with the Si substrate. The comparison of three coplanar waveguides (CPWs) on different Si substrates has been performed to provide feasibility of ABF-layer approach. After that, a bandpass filter and baluns have been...
In this paper, we present a wideband doubly-balanced resistive mixer fabricated using a 0.5 μm GaAs p-HEMT process. Three baluns are employed in the mixer. Local oscillator (LO) and radio frequency (RF) baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce the chip size, the Marchand baluns were realized using a meandering multi-coupled line, and inductor...
This paper presents a novel tunable power amplifier module consisting of a CMOS-based broadband power amplifier and a MEMS tunable bandpass filter in K-band. The 90-nm CMOS-based power amplifier with a two-stage cascode configuration and a broadband output matching circuit has an output power of over 20 dBm at a wide frequency range between 16 GHz and 26 GHz. The power amplifier module with a MEMS...
This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 μm SiGe:C BiCMOS technology featuring ft and fmax ≈ 200 GHz. The saturated output power of the amplifier has been improved with the help of current combining and matching techniques. At 60 GHz the power amplifier...
This paper presents the performance of 79 GHz power amplifiers (PAs) for automotive short range radar (SRR) application. A single-ended four stage common emitter circuit topology and a differential PA with integrated baluns are fabricated using 0.13 μm SiGe BiCMOS process. The design and the measured results of the monolithic integrated low-voltage PAs are reported. The 79 GHz differential PA, which...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.