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We describe the design challenges for a low-cost 130nm 3D CMOS technology with 5μm diameter at 10μm pitch Cu-TSV. We investigate electrical, thermal and thermo-mechanical issues encountered in 3D. The electrical yield and ESD of TSVs is reviewed and designers are advised how to ensure yield and reliability. For thermal and thermo-mechanical we'll indicate based on experimental characterization, the...
A new methodology to bridge package and silicon domain simulations is demonstrated using a new data file to facilitate stress information exchange. The flow integration uses equivalent stress conditions to replace sensitive process information and parameterized modules to minimize user interventions for 3D IC stress simulations.
We propose a low power unified oxide and NBTI degradation sensor designed in 45nm process node. The cell power consumption is 105 lower than a previously proposed sensor. The unified nature enables efficient reliability monitoring with reduced sensor deployment effort and area overhead. Using the sensor Dynamic NBTI Management (DNM) has been implemented for the first time. DNM trades the excess `reliability-margin'...
We propose a novel method that exploits BTI to partially offset variation and thus improve SRAM Vmin and yield. We show correlation between a bitcell's power-up state and its static noise margin. By applying stress with periodic re-power-up, device mismatch can be compensated by BTI induced changes. The proposed method has no extra design and area cost. It can be applied during burn-in test to offset...
As CMOS scaling extends into the nanoscale regime, designers need to be aware that device behavior depends not only on traditional geometric parameters such as channel length and width, but also on layout implementation details of the device and its surrounding neighborhood. The advent of stress engineering, in which intentional mechanical stress is applied to improve device performance, also adds...
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