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In this paper, we present a discussion and comparison of CMOS and GaAs HBT technologies for handset power amplifiers. Our perspective is unique to other comparisons in that we actually have products in both technologies. To understand the application space where each of these technologies makes sense, we discuss current and near-term PA requirements as well as technology and technology support issues...
We present the design and test results for D-band CMOS transmitter (Tx) and receiver (Rx) for ultra-high speed and short distance data communications. The Tx/Rx employs modulation/de-modulation based on Amplitude-Shift Keying (ASK) to facilitate a non-coherent data link without power-hungry PLL, data converters, and complex DSP. The Tx consists of a wideband 131~140GHz VCO along with an On/Off key...
A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier achieves a saturated output power (Pout,sat) of +13.2 dBm and 1dB compressed output power (Pout,1dB) of...
A stacked amplifier architecture has been used to achieve high RF output power levels in sub-100nm CMOS. The stacking makes it possible to both operate the power amplifier (PA) from a large supply voltage and implement RF power combining. As a proof of concept, a 6.5-GHz PA has been integrated in a 65-nm standard CMOS technology. The amplifier achieves 27.4-dBm output power with an efficiency of 19...
An integrated linear 2.4GHz CMOS power amplifier is presented. With a 3.3v supply, the PA produces a saturated output power of 33.5dBm with peak drain and power-added efficiencies of 44.2% and 37.6%, respectively and has 40dB small-signal gain. By utilizing gm-linearization and digital pre-distortion, an EVM of -25dB is achieved at 26.4dBm with 22% PAE while transmitting 54Mbs OFDM. The chip is fabricated...
A 65nm digitally-modulated polar transmitter incorporates a fully-integrated 2.4GHz efficient switching Inverse Class D power amplifier. Low power digital filtering on the amplitude path helps remove spectral images for coexistence. The transmitter integrates the complete LO distribution network and digital drivers. Operating from a 1-V supply, the PA has 21.8dBm peak output power with 44% efficiency...
We present a novel fully differential input/output distributed transformer topology used for the design of millimeter-wave power amplifiers. Input/output distributed transformers are used to feed the input signal to four differential couples and to combine their output power. This topology improves the stability and the efficiency of the power amplifier, minimizing the chip area. The PA prototype...
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