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The initial charge state of SOI nanowire sensors after their long storage in air ambient has been identified by measuring the drain-gate characteristics of SOI nanowire transistors. In the examined structures, the density of the surface charge was found to be ranging within the interval 2×1012-4×1012 cm-2. Two surface treatments were given to the samples to clean the surface of SOI nanowire sensors...
A new circuit of a high-speed CMOS full adder cell is presented. The proposed adder cell refers to the CMOS adders class executed on CMOS mirror design style, with the attributes intrinsic to this class: absence of power consumption in a static mode, absence of incomplete levels of voltages inside the circuit and, hence, necessity to restore these levels. The proposed solution of adder cell provides...
The article describes designing of a low-noise amplifier with protection of input stages against influence input CW power to 2 W working in a range of frequencies 3...8 GHz with gain not less than 32 dB. The amplifier is made of the quasi-monolithic circuit. The basic stages of design, modeling of amplifier operation and its implementation are described. Comparative results of simulated and measured...
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