The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The variations of drain current (ID) with drain voltages (VD) at different temperatures, namely, 27 K, 50 K and 77 K are computed for a two dimensional 10 nm GaAs MOSFET. A displaced Maxwellian model is assumed for the electron distribution and the interactions with deformation potential acoustic and polar optic phonons are considered using the analytical expressions based on a momentum conservation...
We have theoretically studied the velocity-field characteristics in zinc-blende (zb) GaN by solving the Boltzmann transport equation with the help of one-particle Monte-Carlo method. The deformation potential acoustic phonon, polar optical phonon, alloy, impurity and inter-valley phonon scatterings have been included in our computations. At an electric field of approximately 50 kV/cm, the negative...
We have calculated the gain in GaAlAs/GaAs superlattice laser taking into account the intersubband transitions of electrons via longitudinal optic ( lo) phonons. The lo phonons are treated by the dispersive continuum model. Gain variation with the well-width is studied considering both superlattice and bulk phonon model. The electron mobility is calculated and its variation with well-width is also...
In this work, we calculated the drift-diffusion drain current of a strained Si n-channel MOSFET grown on a relaxed Si1-xGex layer using a compact model. The results are compared with the experimental data already reported. The current is also compared with that of unstrained Si n-MOSFET. The effect of strain and oxide thickness are also determined and reported here.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.