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Nonlinear HBT models are presented for 15 W power amplifiers with superior back-off linearity. Each amplifier consists of 8 Building Blocks of 28 V InGaP/GaAs HBT. The P1dB is 42 dBm. The models are based on the AHBT model for the Building Block (1 BB) reported previously. The model for the amplifier at 2.14 GHz is scaled from the AHBT model for 1 BB whereas the model for the amplifier at 940 MHz...
This paper presents the development of high power AlGaN/GaN HEMTs on GaN/SiC epi-materials in MACOM Technology Solutions. Instead using state-of-the art via-hole technology popular in the GaN HEMT industry to have the common-source on the device bottom, our source-contact is designed on the device top-surface for enhancing its surface thermal dissipation as well as achieving variable input and output...
We have proposed a novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level. It is shown that the carrier PA having 100 Omega load impedance is not an optimum for maximizing the efficiency at the back-off level due to the knee voltage effect. Thus, we introduce a Doherty PA having a load impedance larger than 100 Omega when the peaking PA is turned...
A 2.4/3.4 GHz dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1 dB and PAE of dual band PA is 22.4 dBm and 28.8% at 2.4 GHz, and 18.8 dBm and 14.4% at 3.4 GHz, respectively. Also the measured output power at which the achieved EVM is -25 dB is 15 dBm at 2.4 GHz and 12.7 dBm at 3.4 GHz...
This paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency frontend. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4 GHz and 3.5 GHz in IBM 0.13 mum CMOS technology. The designed 1.25 mm times 1.25 mm...
GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules...
This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15 W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band. The work reported here...
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