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A new silicon transistor has been developed that enables the design of high power pulsed amplifiers through its unique device structure and reliable packaging methodology. The HVVFETtrade (High Voltage Vertical Field Effect Transistor) technology has been optimized for pulsed applications with an all gold wire scheme. The HVVFET has been characterized with over 10 billion pulses with no sign of wire...
A direct analytical extraction of a wide-band non-quasi-static linear table-based FET model is demonstrated in this study. It captures and encapsulates the undesired RF-behaviours that frequently appear in high-frequency transistors especially for sub-micron silicon technologies. The undesired kink-behaviour is compensated for by introduction of lumped element RC networks in both extrinsic and intrinsic...
Two hybrid broadband distributed amplifiers were designed and fabricated in microstrip using deep-submicron AlGaN/GaN HEMTs grown on silicon. One design is optimized for high gain and achieves a measured S21 of 10 dB in the band of 0-17 GHz. The second is optimized for bandwidth and yields a measured S21 of 8 dB in the band of 0-22 GHz. To the best of our knowledge, such performances are unprecedented...
We analyze accurately in this work the form birefringence effects in circular photonic crystals at optical frequencies. As in dielectric multilayered structures which behave as negative uniaxial crystals the dielectric concentric circular patterns admit two preferred propagation directions defined by an extraordinary and an ordinary refractive index representing two field polarizations. The model...
Frequency quadruplers for an integrated 77 GHz subharmonically pumped automotive radar transceiver in SiGe are presented. The fully differential circuits are integrated in a 200 GHz SiGe:C production technology and operate at a supply voltage of 3.3 V. Two different multiplier concepts are introduced and evaluated. The individual multipliers are combined with a radar transceiver circuit and the receive...
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for...
In this paper, a fixed-frequency filter and two RF MEMS based frequency-agile filtfiltersers at Ku-band are demonstrated. All filters are designed in a so-called Substrate Integrated Cavity (SIC) topology, and they are processed in LTCC (Low Temperature Co-fired Ceramics) DuPont 943 substrate. The tunable filters are steered over frequency by means of coplanar stubs, whose electrical length is adjustable...
HMIC, an acronym for Heterolithic Microwave Integrated Circuits, is fundamentally a wafer level substrate which combines low, RF loss tangent glass with micromachined silicon to produce three dimensional circuitry with the capability to make RF, DC, and thermal vias as the device input and output. Using this technology both active and passive RF devices have been produced which have demonstrated excellent...
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