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This paper presents the development of high power AlGaN/GaN HEMTs on GaN/SiC epi-materials in MACOM Technology Solutions. Instead using state-of-the art via-hole technology popular in the GaN HEMT industry to have the common-source on the device bottom, our source-contact is designed on the device top-surface for enhancing its surface thermal dissipation as well as achieving variable input and output...
This paper stresses on critical requirements for characterizing device inherent intermodulation distortion (IMD) products in power HEMTs for 3G wideband applications. An accurate broadband RF testbench is essential for reliable nonlinearity measurements. With the optimized IMD characterization testbench, the reproducibility of sweet-spot behavior in GaAs and GaN HEMT technologies has been investigated...
In this paper, microwave power performance at 10 GHz of HEMTs fabricated on MOCVD and MBE epitaxial structures grown on composite substrates is demonstrated. These substrates, based on monocrystalline-SiC layer on a polycrystalline-SiC (SiCopSiC), are engineered using the Smart Cuttrade technology. They are based on innovative engineering in which a thin SiC single crystal layer is transferred on...
In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 mum Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point...
An X-band MMIC containing two 6 bit phase shifters and 1 Watt amplifiers in balanced configuration has been developed. The device has two output ports. The balance between the output powers of the two ports can be controlled via de phase shifter settings. This MMIC could be applied in systems where variable linear polarisation control is required, such as polarimetric radar or satellite communication...
WSP (wafer scale packaging) has come on the market for commercial applications in 2008. But how is a WSP constructed and what are its advantages over traditional surface mount techniques? This paper explores how WSP is applied to traditional GaAs PHEMT wafer manufacture as implemented by Avago Technologies in the first volume commercial offering of WSP in 2008. The paper details the general construction...
This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15 W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band. The work reported here...
A power amplifier using the common-gate (CG)/common-source (CS) circuit topology to implement the linearity improvement technique has been designed and implemented in 0.15 mum GaAs pHEMT technique for WLAN/WiMAX applications. The simulation analysis reveals that the CG circuit provides the characteristics of gain and phase compensation to improve the nonlinearity of CS circuit. Combining the CG circuit...
An optical photo lithography based 0.15 mum GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575 mA/mm, BVgd=14 V, and 753 mW/mm of output power density at P-1 condition at 18 GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85 GHz applications are described...
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