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Cost effective Ku-band up-mixer and down-mixer MMIC's, that use a three-dimensional MMIC technology optimized for flip-chip implementation, are presented. The MMIC structure incorporates inverse TFMS lines so that a ground metal can be applied to cover the whole chip surface except for interconnect pads. Among multi polyimide and SiN layers, four wiring metal layers are composed. Hence, these MMIC...
This paper presents a comparison of two low-noise mixers designed in Infineon's 0.13 mum CMOS and 0.35 mum SiGe:C processes. The mixers have been optimized for low-noise performance for narrow-band 24 GHz applications. Both circuits are based on the Gilbert cell and have similar topology. The chips are designed to fulfill high robustness requirements for industrial and automotive applications. The...
An active frequency-doubler MMIC achieving an output frequency of 300 GHz and its monolithic integration with a 300 GHz resistive mixer is presented. The frequency-doubler provides a broadband source with an average output power of -9.5 dBm and better than 10 % conversion efficiency in the frequency range from 250 to 310 GHz. At 300 GHz, a non-saturated output power of -6.4 dBm is measured at an input...
In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 mum Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point...
This paper describes a 60 GHz-band MMIC chipset which consists of amplifiers, mixer, and switch, and two modules integrated on multi-layer LTCC substrates for multi beam access point of the wireless broadband communication systems. We are studying the ldquomulti beamrdquo access-point to provide the high speed, secure, and effective wireless link to the wide cover area. To reduce the out-of-band spurious,...
A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 mum2 AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz...
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