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This paper dealt with the following topics: gallium arsenide circuits and applications; high efficiency-high power amplifiers; transceiver technologies; silicon devices for RF; advanced microwave technology modelling; voltage-controlled oscillators; wide band-gap technology; wide band-gap devices; physics-based modelling; EM modelling; silicon-based frequency generation circuits; conversion circuits;...
In this paper, a fixed-frequency filter and two RF MEMS based frequency-agile filtfiltersers at Ku-band are demonstrated. All filters are designed in a so-called Substrate Integrated Cavity (SIC) topology, and they are processed in LTCC (Low Temperature Co-fired Ceramics) DuPont 943 substrate. The tunable filters are steered over frequency by means of coplanar stubs, whose electrical length is adjustable...
This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed MEMS transmission line (SW-DMTL) presenting...
This paper presents a novel tunable bandpass filter design with independent control of both the centre frequency and the bandwidth by means of analogue-series and digital-shunt MEMS capacitors. The filter is designed for operation in X and Ku bands with 4 pre-selected centre frequencies (from 10 GHz to 14 GHz) and with a bandwidth tunability of 70% (variable between 500 MHz and 1 GHz). The filter...
In this paper we present the main scope and initial results obtained within a pan-European research activity aiming at a successful monolithic integration of innovative RF MEMS switches into a standard GaAs MMIC process technology. Measured results of a fabricated ohmic contact type of RF MEMS switch developed by the OMMIC foundry show promising results e.g. in terms of low RF losses (0.2-0.4 dB is...
This paper presents first experimental results on high Q MEMS tunable microwave cavity using RF-MEMS switched varactors. MEMS varactors that have been used in this work are based on a dielectric less tunable cantilever actuator, with good reliability and well-established fabrication process. It is shown that one can obtain large Q using type of component, with measured Qu between 550 and 850 for a...
HMIC, an acronym for Heterolithic Microwave Integrated Circuits, is fundamentally a wafer level substrate which combines low, RF loss tangent glass with micromachined silicon to produce three dimensional circuitry with the capability to make RF, DC, and thermal vias as the device input and output. Using this technology both active and passive RF devices have been produced which have demonstrated excellent...
This paper presents an RF MEMS tunable filter implemented in waveguide. A compact waveguide topology was chosen to make use of high-Q cavity resonators for the creation of a low-loss, two-pole filter. The filter results in an insertion loss of 4.7-5.8 dB over the tuning range 10.12-10.33 GHz with a relative bandwidth of 0.42-0.67%. This design demonstrates an unloaded quality factor of 169-319 over...
This paper reports on phase error and nonlinearity investigation of a novel binary-coded 7-stage millimeter-wave MEMS reconfigurable dielectric-block phase shifter with best performance optimized for 75-110-GHz W-band. The binary-coded 7-stage phase shifter is constructed on top of a 3D micromachined coplanar waveguide transmission line by placing lambda/2-long high-resistivity silicon dielectric...
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