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In today's world of rapidly changing technology, systems are being designed with speed in mind. From sensors to processors, every designer wants to avoid delay of all kinds. To maintain very high bandwidth and linearity performance while simultaneously minimizing consumed power, many engineers choose gallium arsenide pHEMT switch products for their designs. With the increasing pressure for systems...
This work illustrates a study on GaN HEMT switch RF performances dependence on material and fabrication technology. For said study different gate technologies has been fabricated on the same wafer and successively characterized, and for a fixed gate geometry (T-Gate) different substrate properties have been evaluated. In particular switch transistor performances in terms of off-state isolation, on-state...
This paper reviews the design and measurements of a DC-20 GHz GaAs SPDT (single-pole-double-throw) switch with state-of-the art insertion loss, isolation and power handling in a low cost plastic QFN (Quad Flatpack Non-lead) package. To reduce the performance degradation introduced by the plastic QFN package, 3D EM (electromagnetic) modelling was used to characterize the interconnection between the...
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