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A cladding-modulated Bragg grating implemented using periodic placements of silicon cylinders in the cladding along a silicon waveguide is proposed. Modeling results are verified experimentally, demonstrating coupling strengths differing by an order of magnitude.
This paper presents an overview of advances in highly-integrated photonic networks for emerging many-core processors. It explores the tight interaction among logical and physical implementations of all-to-all core-to-core and core-to-DRAM networks, and underlying photonic devices.
We propose a very short polarization splitter/combiner using two horizontally-slotted waveguides. A 46.7-mum conversion length is achieved with 22 dB extinction ratio. The bandwidth is 18 nm for ER>20 dB.
Ultra-broad bandwidth (3.75 THz) RF spectrum analysis of femtosecond optical pulses is reported for the first time, enabled by the use of a short 6 cm length Chalcogenide waveguide designed for high nonlinearity and broadband low dispersion.
We demonstrate ultra-broadband low-peak-power frequency conversion of continuous-wave light in a silicon photonic structure via four-wave mixing. Our process produces continuous conversion over two-thirds of an octave from 1241-nm to 2078-nm wavelength light.
Compact germanium waveguide photodetector with 38 fF capacitance, 40 Gbps bandwidth and 0.4 A/W responsivity is demonstrated. High-quality Ge-on-insulator single-crystalline layer was monolithically integrated into front-end CMOS process by lateral seeded crystallization.
Spontaneous-parametric down-conversion bandwidth control between 7 nm to 676 nm is reported in an integrated source of frequency anti-correlated photon-pairs using type-I and type-II phase-matched AlxGa1-xAs Bragg reflection waveguide.
We propose on-chip slot-waveguide-based dispersion-flattening devices, which can exhibit either a highly negative dispersion of -31300 ps/nm/km over 147-nm bandwidth, or a near-zero dispersion of 0plusmn350 ps/nm/km over 306 nm bandwidth.
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