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The past few years has witnessed the emergence of CMOS based circuits operating at millimeter wave-frequencies. Co-design of fully integrated 60 Ghz CMOS single chip digital radio with low cost QFN package is the promise for high volume low cost fabrication, opening huge commercial markets. As standardization efforts catalyzed the interest and investment of industry and agencies, one can be assured...
In this paper, a 2:1 current model logic (CML) frequency divider operating at frequencies up to 50 GHz is reported. A novel circuit topology is employed, which consists of the conventional CML structure with LC-tank components as the output load of the divider. An analytical model of the proposed frequency divider is developed and a new method is presented to estimate the divider's performance. The...
New process modules and device architectures for (sub-) 32 nm CMOS lead to both opportunities and challenges for analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures (planar bulk CMOS versus FinFETS), and their impact on analog/RF performance. FinFETs will be shown to be better suited for analog baseband design and to have...
Leading-edge CMOS provides transistor performance that, by traditional measures, is more than adequate for implementing millimetre-wave transceivers. Analogue and RF design is supported by device-level libraries and extraction tools. Simple extensions to these will allow rapid design cycles for millimetre-wave applications.
We present design aspects and techniques for millimeter-wave circuits implemented in 65-nm CMOS. Different transmission line topologies are discussed and measurement results for a conventional coplanar waveguide and slow-wave coplanar waveguide implemented in 65-nm CMOS are shown. The attenuation of the on-chip transmission lines can be reduced by using slow-wave coplanar waveguides. A 1-stage cascode...
A SAW-less direct-conversion receiver is presented which utilizes a mixed-signal feedforward path to regenerate and equalize IM3 products, thus accomplishing system-level linearization. The receiver system performance is dominated by a custom integrated front end realized in 130 nm CMOS and achieves an uncorrected out-of-band IIP3 of -7.1 dBm under the worst-case UMTS FDD region 1 blocking specifications...
As CMOS scales down and sees is cost per mm2 increasing, area-aware RF design solutions are called for. Integrated inductors with multiple taps allow for low-area multi-band RF circuit design. This work reports on the design of these inductors and provides modelling and extraction procedures demonstrated on 4-port measurements. Additionally, the application of such inductors is demonstrated on a low-area...
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