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In this paper, we propose a novel MOSFET design: Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET and investigate the effect of the negative junction depth (NJD) for different source drain(S/D) extension on the electrical behaviour of proposed structure. The results are compared with conventional Trapezoidal Recessed Channel (TRC) MOSFET using device simulators-DEVEDIT 3-D and...
A very simple electrochemical process is used to deposit platinum (Pt) and nickel (Ni) on silicon (Si) substrate to form Schottky junction. The electrical behaviors of these Schottky junctions are observed. We also used TCAD (SILVACO 3.2) to fabricate these Schottky junctions and to observe the electrical behavior of these devices, and it shows that experimental and simulated results are close.
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