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Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
Electrical power dissipation has been an unfortunate penalty paid for achieving net CW gain in silicon Raman amplifiers and lasers. We report the first observation of net CW gain with zero electrical power dissipation.
We present the first full theoretical study of femtosecond pulse propagation in silicon wires. Dispersion effects up to the third order, Kerr nonlinearity, intrinsic losses, free carrier and two-photon absorption effects are included.
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