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For future 65 nm and smaller nodes, thermal anneal processes in the ms and mus range are required. Based on laboratory tests using the line scan method, an R&D system has been developed.
Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
We demonstrate infrared lasing operation for the first time of solution-processible colloidal nanocrystal quantum dots. The 1.53 mum emission wavelength of the whispering gallery mode laser was temperature insensitive up to 250 K.
Output performances of the injection-seeded narrow-linewidth nanosecond pulsed deep-ultraviolet coherent light source we developed here are discussed with the optogalvanic spectroscopy of silicon atoms. The spectroscopy indicates its potentials useful for controlling atomic waves resonantly.
Survey of research directed to create semiconductor intraband THz lasers based on bulk Ge and Si samples and on quantum well systems is given. Some recent proposals and observations in the field are also covered.
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
A Si laser with a Si micro-disk evanescently coupled to a III-V gain medium is proposed. The III-V also functions as a DBR at the gain wavelength to minimize the perturbation of the cavity mode.
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