The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.
We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 mum and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%.
Two-photon-induced photocurrents in two different semiconductors were coherently controlled simultaneously via femtosecond pulse shaping. Due to their distinct two-photon-absorption spectral responses, their photocurrent yield ratio was maximized (1.20:1) or minimized (0.75:1) using an evolutionary algorithm.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.