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We investigate slow-light enhancement of stimulated Raman scattering in monolithic silicon photonic crystal defect waveguides. The applied Bloch-Floquet formalism demonstrates remarkable gain enhancements up to 104 at the band-edges, while considering disorder, absorption and coupling.
We use phase-matched four-wave mixing in appropriately designed silicon waveguides to demonstrate amplification over a 29 nm range and efficient wavelength conversion in the range from 1511 nm to 1591 nm.
Electrical power dissipation has been an unfortunate penalty paid for achieving net CW gain in silicon Raman amplifiers and lasers. We report the first observation of net CW gain with zero electrical power dissipation.
We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20 cm-1 is determined.
We show experimentally that helium ion implantation in silicon can reduce the optical loss from free carriers produced by two photon absorption and allow optical gain from cw pumped stimulated Raman scattering in silicon waveguides.
A Si laser with a Si micro-disk evanescently coupled to a III-V gain medium is proposed. The III-V also functions as a DBR at the gain wavelength to minimize the perturbation of the cavity mode.
We demonstrate all-optical tunable delays as long as 4 ps in a silicon-on-insulator waveguide using stimulated Raman scattering, which represents an important step towards implementing optically tunable dispersion in small-scale photonic devices.
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