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We report the first single-shot measurements of transverse and longitudinal structure of laser-generated wakefields. Real-time, non-averaged measurements of resonant wakes reveal detailed temporal and spatial features that depend on pulse energy and electron density.
We report our progress towards the realization of a tunable and narrow-band source of correlated photons for coherent manipulation of cold atoms, using a combination of four-wave mixing and electromagnetically induced transparency.
Using a bi-frequency pumped Raman amplifier in a Rb vapor cell, we demonstrate experimentally the condition for achieving a null group index, necessary for fast-light enhanced rotation sensing in a passive cavity Sagnac gyroscope.
Ultrafast electron dynamics in quasi-one-dimensional NbSe3 conductors was investigated by means of two-color pump-probe reflectivity measurements. The results clearly demonstrate the resonant probing of the charge-density-wave phases with different transition properties.
XUV harmonics are used to study the photoelectron spectrum of O2. The autoionization states of O2 are further investigated using XUV harmonic as pump and IR laser as probe.
Blue light-induced infrared absorption is investigated in bulk and periodically poled KTiOPO4, MgO:stoichiometric-LiNbO3, MgO:stoichiometric-LiTaO3, KNbO3. KNbO3 and MgO:stoichiometric-LiNbO3 show the lowest susceptibility to the induced absorption. Periodic poling increases the susceptibility in KTiOPO4 and MgO:stoichiometric-LiTaO3.
An elliptically polarized absorption quantum-beat spectroscopy is developed and used to observe electron-spin coherence relaxation in an intrinsic bulk GaAs in Voigt geometry. The temperature dependence of electron-spin coherence lifetime is first obtained.
An experimental evidence of electromagnetically induce narrowing of an absorption line is presented. The width of this resonance is sub-Doppler and subnatural and it is confined between two closely spaced electromagnetically induced transparency windows.
Both optically and electrically controllable slow and superluminal light are demonstrated via four-wave mixing in semiconductor optical amplifiers. Tunable delays up to 1.2 ns are achieved for 0.5 GHz, corresponding to a RF phase change of 1.2 p.
We present the first observation of the laser-assisted photoelectric effect in surface photoemission. Illuminating a Pt(111) sample simultaneously with 1.6 eV and 42 eV pulses, we observe ldquodressingrdquo of the EUV photoelectron spectrum.
We demonstrate slow light at room temperature using a quantum-dot semiconductor optical amplifier with a controllable delay by forward and reverse bias below the transparency current level.
We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements using a high-resolution spectral hole burning technique are performed on quantum dots in a semiconductor waveguide.
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