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This paper will present fiber laser cutting results in stainless steel using a PSO enabled motion system. The objective for this work is to minimize the HAZ and heat distortion during laser micro machining.
The infrared real-time temperature measure by a PbSe sensor with high spatial resolution via aspheric optics has been exploited to control temperature-sensitive material microprocessing. Applications in the range from 370 K to 800 K has been discussed.
For future 65 nm and smaller nodes, thermal anneal processes in the ms and mus range are required. Based on laboratory tests using the line scan method, an R&D system has been developed.
Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.
We present a diode laser concept for precision spectroscopy which is based on a novel optical feedback scheme that combines excellent frequency stability (< 35 kHz line width in 290 ms) with good tuneability (45 GHz continuously, 50 nm overall).
We describe a standoff sensor for monitoring, from above 3,000 m, the natural gas transmission pipeline infrastructure. Using an EDFA, the sensor amplifies the tunable diode laser beam from a Wavelength Modulation Spectroscopy platform.
Reviewed will be the DARPA program on high efficiency diode pumps for solid state lasers. ADHELS will be described having a goal of developing a scalable architecture for an all-diode HEL.
New high-through-put bioaerosol enricher and identifier system is reported. Enrichment is realized by aerodynamic deflection of particles have the UV-laser-induced-fluorescence spectra as biomaterials in question. Identification of deflected aerosols is achieved with fluorescent antibody assay within microfluidic cells.
An efficient Cs vapor laser pumped by a diode laser has been demonstrated. This laser can be scaled to high powers and can be used for missile defense and for MANPADS protection.
We review the history of semiconductor microlasers, and provide a selective survey of emerging topics in this field covering VCSELs, VECSELs in optically and electrically-pumped formats, and a range of microcavity devices.
RIN characteristics in a frequency stabilized MSL were experimentally and theoretically investigated. Average RIN level of less than -150 dB/Hz as well as Modal RIN reduction of approximately 3 dB were obtained from the frequency stabilized MSL.
A diode pumped Yb:YAG regenerative amplifier has been developed for short pulse generation. Average output power of 10 W was achieved at pulse repetition rate of 100 kHz with 6.2 ps pulse width.
We have measured thermal conductivity of Y3Al5O12, GdVO4, and YVO4. It was found that YVO4 has larger thermal conductivity than GdVO4. Nd3+-doping effect in thermal conductivity and thermal expansion ratio have been also discussed.
New geometry for edge-pumping composite solid-state microchip laser suitable for high power scaling is presented. Yb:YAG/YAG composite device with 200-mum thick 15-at.% Yb:YAG of 3.6-mm diameter produced on-time 34 W output power with 0.26 slope efficiency.
We report a compact, narrow-line intracavity OPO with a grazing-incidence grating. This kHz pulsed OPO fits into a 25 times 25 cm area, generating 30 muJ/pulse at 1560 nm with a linewidth of 0.8 cm-1.
We report the experimental observation of EIT in Cs2 in Lambda configuration. The width of EIT is smaller than widths of molecular transitions and has different dependence on temperature. Application to quantum storage is discussed.
We have developed single frequency and single spatial mode laser structures with high optical power, using an aluminium free active region, which are to our knowledge the first demonstration for Cs pumping at 852 nm.
Highly efficient cavity dumping of Yb:YAG laser has been realized at room temperature with the optical to optical conversion efficiency of 72% for the absorbed pump power.
Powerful ultrashort pulses are generated using a hybrid MOPA consisting of a passively mode-locked semiconductor laser and a Yb-doped fiber amplifier. Pulses 2 ps in duration are amplified to an average power of 0.8 W.
We demonstrate mode switching in tandem quasi-stadium laser diodes. Switching is achieved by optical injection between lasing in the cavity axis and the closed ring trajectory of a quasi-stadium laser resonator.
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