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This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
Error correcting coding is the dominant technique to achieve acceptable soft-error rates in memory arrays. In many modern circuits, the number of memory elements in the random logic is in the order of the number of SRAM cells on chips only a few years ago. Often latches are clock gated and have to retain their states during longer periods. Moreover, miniaturization has led to elevated susceptibility...
In this paper, we present a new technique to improve the reliability of H-tree SRAM memories. This technique deals with the SRAM power-bus monitoring by using built-in current sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the inversion of the state of...
There have been many solutions to create a soft error immune SRAM cell. These solutions can be broken down into three categories: a) hardening, b) recovery, c) protection. Hardening techniques insert circuitry in an SRAM cell possibly duplicating the number of transistors. Recovery techniques insert current monitors in SRAMs to detect SEUs and they employ error correcting codes or redundancy to mitigate...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
Due to their reconfigurability and their high density of resources, SRAM-based FPGAs are more and more used in embedded systems. For some applications (Pay-TV,Banking, Telecommunication ...), a high level of security is needed. FPGAs are intrinsically sensitive to ionizing effects, such as light stimulation, and attackers can try to exploit faults injected in the downloaded configuration. Previous...
This paper presents principles and results of dynamic testing of an SRAM-based FPGA using time- resolved fault injection with a pulsed laser. The synchronization setup and experimental procedure are detailed. Fault injection results obtained with a DES crypto-core application implemented on a Xilinx Virtex II are discussed.
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