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Wavefront measurements with large dynamic range on high-power diode lasers are demonstrated. The wavefront sensor exhibited a large dynamic range of pi/2 to -pi/2 and high accuracy of the wavefront slope angle of 0.05 degree. The result of this study may provide an accuracy method for measuring the wavefront distributions of the diode lasers and the light sources with large divergence angles, such...
Coupled electromagnetically induced transparency (EIT) has been observed with a dual mode control laser. The technique can be used for generating EIT-comb from optical frequency comb.
We report on a low-noise diode laser system for coherent precision spectroscopy of individual ro-vibrational molecular states. A 10 fold reduction of frequency-noise of our diode laser with respect to grating stabilized diode lasers is presented.
A fiber coupled high-finesse external cavity diode laser for cavity ringdown spectroscopy was successfully demonstrated. The sensitivity of 1 times 10-7 cm-1 was achieved in a 1 cm3 remotely located ringdown cavity as a sensor head.
Combined thermal and near-field imaging monitors the catastrophic optical damage dynamics in diode lasers. Red-emitting high-power lasers display a very rapid and spatially confined catastrophic process with re-absorption as the key-mechanism of device degradation.
Power scaling by increasing the pump spot area is shown to be intrinsically limited in semiconductor disk lasers with diamond heatspreaders. An output power of 9 W is reported for a 1060 nm device.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We identify experimentally the effects of laser linewidth and intensity noise on optical OFDM systems, and show that commercial DFB lasers are suitable transmitters even when operated at low powers.
Tuned by a variable reflective mirror, we achieve 71.2-W free-running and 30-W maximum average power in range of 1866-2107 nm in Tm-doped fiber lasers. Watt-level powers are generated from single crystal and ceramic Cr2+:ZnSe disk lasers.
We report the world-first successful demonstration of widely spaced dual wavelength interband cascade lasers operating simultaneously in continuous wave near 3.5 and 4.5 microns.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
CW operation is achieved in novel semiconductor ring lasers based on retro-reflector cavities with parabolic mirrors downsized to equivalent ring radius of 16mum at room temperature. L-I curves and optical spectra are observed.
Rectangular ring lasers based on an active vertical coupler structure are fabricated through asymmetric double shallow ridge and ICP/ICP cascade etching. 25% reduction of Ith and the single mode operation with SMSR 23dB are achieved.
We report on the integration of semiconductor ring lasers with tunable directional couplers to modulate the Q-factor of the ring cavity. Active Q-switching is demonstrated with 120 ps pulses, up to frequencies of 1.8 GHz.
We present a detailed characterization of the semiconductor ring-laser operating regimes with special emphasis on the response to optical injection. Applications to an optical set/reset bistable memory and four-wave-mixing tunable THz signals generation are demonstrated.
We report the shortest pulses (290 fs) obtained directly from semiconductor lasers. These were achieved using a passively mode-locked semiconductor disk laser with a graded-gap barrier design in the gain section operating near 1036 nm.
The all-optical response of a semiconductor ring laser to two optical injections demonstrates very digital hysteresis with externally controllable switching threshold, enabling the device to be used for all-optical pulse regeneration.
We demonstrate a record resonance frequency enhancement of 1.55-mum VCSELs from 10 GHz to 107 GHz under ultra-high optical injection locking. Detuning and injection-ratio dependence are characterized to show the broad applicability of the technique.
The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use. The design is discussed and LIV and small signal frequency response is presented.
We demonstrate diode lasers with integrated feedback gratings using nanoimprint lithography. Our process is developed for epitaxially grown semiconductors. Due to the feedback from the grating longitudinally single mode lasing is achieved.
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