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Large scale optical integration is enabled by high index contrast materials and building blocks. We highlight recent advances in the miniaturization of optical elements and of dense integration of planar lightwave circuits for telecommunications and RF photonic applications.
Dispersion control and active materials integration have yielded plasmonic components including i) three-dimensional single layer plasmonic metamaterials ii) all-optical, electro-optic and field effect modulation of plasmon propagation iii) plasmon-enhanced absorption in solar cells.
Potential and possibility of a photonic crystal optical buffer is discussed and some recent advances are presented. A wideband dispersion-free tunable delay is experimentally demonstrated using SOI chirped photonic crystal coupled waveguides.
We have investigated the Bragg gratings for surface plasmonic polaritons modes in the metal-dielectric-air waveguide and proposed a bidirectional coupler which is capable to guide the incident light at different wavelengths along two predetermined directions.
We present the first full theoretical and numerical analysis of the influence of the waveguide geometry and intrinsic material frequency dispersion of the nonlinearity, on the Si wires effective third-order nonlinearity and its frequency dispersion.
We demonstrate 268 nm period planar Bragg gratings and Mach-Zehnder interferometers fabricated by direct UV-writing. Grating reflectivities of ~30 dB and FWHM of ~0.16 nm were measured at operational wavelengths around 800 nm.
Recently developed novel psilaflat fiberpsila substrate promises flexible, long-haul integrated optical devices. Here, we present the first demonstration of one such device; an evanescent field sensor, based upon direct UV written Bragg gratings.
Ridge waveguides are manufactured using laser radiation for the deposition of thin films and the micro structuring of the wave guiding structures. The optical properties of erbium and praseodymium doped ZBLAN thin films and waveguides are investigated in view of the manufacturing of green integrated waveguide lasers.
The emission of high-Q c-Er2O3 resonators displays little inhomogeneous broadening, robust vacuum-Rabi splitting, and strong upconversion. Considering these effects and a rate-equation model, we analyze the prospects for optically pumped on-chip lasing using c-Er2O3.
We demonstrate a bowtie geometry in a silicon planar resonator with an ultra-small modal volume .01(lambda/2n)3. Bowtie, ring resonators and 1D and 2D photonic crystal resonators are compared for tradeoffs in confinement and quality factors.
We report on the integration of semiconductor ring lasers with tunable directional couplers to modulate the Q-factor of the ring cavity. Active Q-switching is demonstrated with 120 ps pulses, up to frequencies of 1.8 GHz.
Substrate- removed GaAs/AlGaAs nanowire phase modulators with 0.51 V pi phase shift efficiency were fabricated. Quasi push-pull driven Mach-Zehnder intensity modulators made out of these phase modulators have record low 0.3 V drive voltage for 7 mm long electrode.
We evaluated the effect of a flat band in photonic crystal directional coupler optical switch for shortening the switching length. And we experimentally demonstrated that the flat band shortened the switching length by 29 times.
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
The integration of photonic crystal (PC) resonators into the active region of terahertz quantum cascade lasers emitting around 2.7 THz is presented. The PC acts as frequency selective mirror and allows the tuning of the emission frequency throughout the entire gain region of the active zone. The PC and the gain region are embedded in a double-metal wave guide.
We predict a novel type of defect-free surface waves which, in contrast to previously studied Tamm or Shockley type waves, appear in truncated but otherwise perfect arrays of coupled optical waveguides with periodically bent axes.
A technique to fill semiconductors inside a microstructured optical fiber is developed. The structural, electrical and optical properties are investigated. All-optical modulation of light and an in-fiber field effect transistor are demonstrated using this device.
YIG waveguides and polarizers were integrated monolithically onto semiconductors. The waveguide losses were 1.55 dB/mm with Faraday rotations of 0.2 dB/mm. Birefringence was minimized by optimized etching. Photonic crystal polarizers and biasing films completed the isolator.
The development of integrated polarization manipulating devices opens the perspective on the use of polarization as a new design dimension in InP-based integrated optics. Examples will be given of how this results in additional functionalities.
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