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A photonic crystal slab nanocavity with a single InAs quantum dot in a field antinode is a promising system for cavity QED because of the cavitypsilas small volume and the dotpsilas stationary position.
Using scanning Kerr-rotation microscopy, we directly image the injection and subsequent transport of spin-polarized electrons in semiconductors. We discuss optical spin injection as well as electrical spin injection in hybrid Fe/GaAs spin transport devices.
We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
Photonic crystal fibers were demonstrated as an optimal platform for enhancing the Raman signals to study nanoparticles properties in liquids. Raman was used to analyze stages of low concentrations of ZnO nanoparticles growth in solution.
We demonstrate ultrafast self- and cross-absorption saturation and self-phase modulation based on near-infrared intersubband transitions in GaN/AlN quantum-well waveguides designed to minimize the nonlinear switching energy.
Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.
By incorporating GaAs/AlGaAs based uni-traveling-carrier photodiodes with broadband micromachined monopole antennas, the demonstrated photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100~250GHz), which was measured by another photonic-receiver for ultra-wideband communication.
An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO2/SiO2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.
We integrated into GaN LEDs both two-dimensional photonic crystal patterns and angled sidewall deflectors. The resultant devices exhibited about three-fold enhancement in vertical emission intensity when compared with the planar reference LED device.
We report our investigation of catastrophic optical damaged high power multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers using electron beam induced current (EBIC), focused ion beam (FIB), and high-resolution transmission electron microscope (HR-TEM) techniques.
We find the onset of laser-induced InSb thermal dissociation using coherent optical phonon detection under asynchronous optical sampling. Additionally, laser-induced annealing of Sb thin films is monitored in photoacoustic measurements of sound velocity in real-time.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We reported the systematical study of optical anisotropy of AlxGa1-xN epitaxial films grown on sapphire using FTIR measurements. The experimental data can be theoretically fitted by employing a four-phase layered model. Several specific absorption dips were observed when the aluminum composition is larger than 24%. The dip intensity increases with the aluminum compositions. According to the reciprocal...
We report on the study of incorporation of organic thin film semiconductors with GaN to explore new types of photodetector or solar cell application. Photovoltaic effect and photoconductivity gain have been demonstrated using GaN/CuPc and GaN/alpha -NPD hybrid device structure, which offer new opportunities in design of versatile optoelectronic devices.
We present time-resolved photoluminescence on InGaN/GaN multiple-quantum well LEDs grown on nonpolar and semipolar bulk GaN substrates and investigate increasing indium concentrations toward higher power, longer wavelength light emitters.
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
Plasma resonance of electrons was observed in an antenna-coupled GaAs metal-semiconductor-field-effect-transistor (MESFET) by sweeping bias voltages. This resonant absorption was used to realize a room temperature terahertz detector.
High Q-factor (~60,000) whispering gallery modes are observed from GaAs based micropillar cavities with embedded InAs quantum dots. Low threshold lasing is observed in WGMs near to the peak of the QD ensemble.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
Time-resolved electro-absorption is reported for the first time in a GaInNAs quantum well p-i-n waveguide at 1.3 mum. A recovery of 55 ps demonstrates the potential for optical modulator devices.
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