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We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
Rectangular ring lasers based on an active vertical coupler structure are fabricated through asymmetric double shallow ridge and ICP/ICP cascade etching. 25% reduction of Ith and the single mode operation with SMSR 23dB are achieved.
We report on the integration of semiconductor ring lasers with tunable directional couplers to modulate the Q-factor of the ring cavity. Active Q-switching is demonstrated with 120 ps pulses, up to frequencies of 1.8 GHz.
We present a detailed characterization of the semiconductor ring-laser operating regimes with special emphasis on the response to optical injection. Applications to an optical set/reset bistable memory and four-wave-mixing tunable THz signals generation are demonstrated.
Modulation response of multi-spatial-mode semiconductor mode-locked lasers is studied by using coupled multi-mode rate equations and the analysis agrees well with previous experimental results that show the modulation response well beyond the relaxation-oscillation-resonance limit.
For developing a 1-mum waveband photonic-transport system, we fabricated a harmonically mode-locked semiconductor laser (MLL) RZ-signal source. We successfully demonstrated a 10-Gbit/s error-free transmission over a 7-km single-mode hole assisted fiber (HAF) at 1035- nm.
An alternative to the sub-100 MHz repetition rate laser source is explored. A low noise SCOWA-based harmonically mode-locked laser is developed and temporally demultiplexed to twice the cavity fundamental resulting in a 40 MHz pulse train.
Mid-infrared interband cascade lasers with 11-mum-wide ridge width and Au electroplating operated cw to 288 K, where the emission wavelength was 4.1 mum. Another device emitted at 5.1 mum and operated cw to 229 K.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Passivated 1100-nm broad area lasers reach maximum power of 50-W from a 60-mum stripe under short pulse conditions. Simulations predict and spontaneous emission measurements confirm power is limited by carrier escape from the active region.
A monolithically integrated, compact, polarisation mode converter is incorporated within a Fabry-Perot semiconductor laser diode. The predominant polarisation states of the optical output from each facet are observed to be orthogonal.
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
A pulse is shortened by repeated transits of a quantum well absorber in which the band-edge is detuned to higher energy. The calculated effect is consistent with the experimentally observed formation of 448-fs transform-limited pulses.
We show by analytical and numerical results that coupling an external Fabry-Perot resonator to a semiconductor laser can efficiently suppress noise-induced intensity pulsations (relaxation oscillations). This constitutes a realization of time-delayed feedback control.
The authors report the first passively mode-locked 830- nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.
We simulate the rate equations of nanocavity lasers, introducing gain compression of both the stimulated and spontaneous emission. The resonance frequency and damping are simultaneously enhanced by the Purcell effect, greatly limiting the modulation bandwidth.
Monolithic integration of 1.55-mum ring lasers with distributed Bragg reflectors (DBRs) and distributed feedback DFB lasers are presented. Such configurations show potential for mm-wave generation, wavelength tunability and are attractive for nonlinear dynamics studies in semiconductor lasers.
We have obtained optical pulses via hybrid modelocking in monolithic slab coupled optical waveguide lasers with average powers exceeding 220 mW at a wavelength of 1550 nm.
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