The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
We achieved a record high index sensitivity of 400 nm/RIU in a cw photonic crystal nanolaser with a potential spectral linewidth of 0.1 pm order. We also demonstrated spectrometer-free sensing utilizing nanolaser array.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
We report TM polarized 808-nm lasers bars with 69.5% efficiency at 15degC. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.low-strained quantum well,packaging induced stress.
Self-consistent optical gain analysis of strain-compensated InGaN-AlGaN quantum wells (QWs) using 6-band kldrp formalism shows 28% improvement, which is suitable for laser active regions. MOCVD-grown strain-compensated InGaN QW exhibited 62.7% improvement in integrated luminescence intensity.
An InGaAs/InGaAsP microdisk laser is assembled on silicon using lateral-field optoelectronic tweezers, achieving room-temperature pulsed operation with a threshold power of 0.85 mW. The room-temperature assembly enables a post-CMOS process to fabricate micro-lasers on silicon.
Type-II InGaN-GaNAs quantum well gain media is analyzed for lasers emitting at 450-nm. Optical gain analysis, using 6-band k.p formalism, show 3-times improvement and 40% reduction in threshold current.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.