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We report our investigation of catastrophic optical damaged high power multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers using electron beam induced current (EBIC), focused ion beam (FIB), and high-resolution transmission electron microscope (HR-TEM) techniques.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
We achieved a record high index sensitivity of 400 nm/RIU in a cw photonic crystal nanolaser with a potential spectral linewidth of 0.1 pm order. We also demonstrated spectrometer-free sensing utilizing nanolaser array.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Threshold current reduction and polarization modulation of an electrically injected spin-polarized VCSEL operating at 200 K have been investigated experimentally and theoretically.
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
We report TM polarized 808-nm lasers bars with 69.5% efficiency at 15degC. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.low-strained quantum well,packaging induced stress.
An InGaAs/InGaAsP microdisk laser is assembled on silicon using lateral-field optoelectronic tweezers, achieving room-temperature pulsed operation with a threshold power of 0.85 mW. The room-temperature assembly enables a post-CMOS process to fabricate micro-lasers on silicon.
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