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We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
The slope efficiency of semiconductor disk lasers is seen to be reduced at high output coupling. Careful adjustment of the cavity and pump mode sizes is also necessary for high efficiency and good beam quality.
We present the first demonstration of hysteresis in a semiconductor disk laser mode-locked with semiconductor saturable absorber. It is shown that the size of the hysteresis loop can be controlled by varying the unsaturated gain.
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