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We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
We present a detailed characterization of the semiconductor ring-laser operating regimes with special emphasis on the response to optical injection. Applications to an optical set/reset bistable memory and four-wave-mixing tunable THz signals generation are demonstrated.
A monolithically integrated, compact, polarisation mode converter is incorporated within a Fabry-Perot semiconductor laser diode. The predominant polarisation states of the optical output from each facet are observed to be orthogonal.
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
We simulate the rate equations of nanocavity lasers, introducing gain compression of both the stimulated and spontaneous emission. The resonance frequency and damping are simultaneously enhanced by the Purcell effect, greatly limiting the modulation bandwidth.
We have obtained optical pulses via hybrid modelocking in monolithic slab coupled optical waveguide lasers with average powers exceeding 220 mW at a wavelength of 1550 nm.
The slope efficiency of semiconductor disk lasers is seen to be reduced at high output coupling. Careful adjustment of the cavity and pump mode sizes is also necessary for high efficiency and good beam quality.
An InGaAs/InGaAsP microdisk laser is assembled on silicon using lateral-field optoelectronic tweezers, achieving room-temperature pulsed operation with a threshold power of 0.85 mW. The room-temperature assembly enables a post-CMOS process to fabricate micro-lasers on silicon.
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