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We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
Threshold current reduction and polarization modulation of an electrically injected spin-polarized VCSEL operating at 200 K have been investigated experimentally and theoretically.
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