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Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
Threshold current reduction and polarization modulation of an electrically injected spin-polarized VCSEL operating at 200 K have been investigated experimentally and theoretically.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
We developed 1.1-mum-range oxide-implant VCSELs with InGaAs/GaAsP strain-compensated MQWs. 25 Gbit/s-100degC error-free operation and high reliability over 3000 hours under 150degC operation were successfully demonstrated.
Polarization stable, wafer-fused 1310 nm VCSELs employing sub-wavelength shallow gratings on their top DBR and emitting 1.5 mW single mode output power in the 20degC-75degC temperature range are demonstrated.
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